Design Strategy of 2D Material Field-Effect Transistors: Engineering the Number of Layers in Phosphorene FETs

摘要

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Yin, D., & Yoon, Y. (2016). Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs. Journal of Applied Physics, 119(21), 214312. and may be found at https://doi.org/10.1063/1.4953256